technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened npn silicon switching transistor qualified per mil-prf-19500/255 t4-lds-0042 rev. 3 (100247) page 1 of 7 devices levels 2n2221a 2n2222a jansm C 3k rads (si) 2n2221al 2n2222al jansd C 10k rads (si) 2n2221aua 2n2222aua jansp C 30k rads (si) 2n2221aub 2n2222aub jansl C 50k rads (si) 2n2221aubc 2n2222aubc jansr C 100k rads (si) jansf C 300k rads (si) jansg C 500k rads (si) jansh C 1meg rads (si) absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 50 vdc collector-base voltage v cbo 75 vdc emitter-base voltage v ebo 6.0 vdc collector current i c 800 madc total power dissipation @ t a = +25c 2n2221a, l 2n2221aua 2n2221aub, ubc 2n2222a, l 2n2222aua 2n2222aub, ubc p t 0.5 0.65 0.50 w operating & storage junction temperature range t op , t stg -65 to +200 c thermal char acteristics parameters / test conditions symbol max. unit thermal resistance, junction-to-ambient 2n2221a, l 2n2221aua 2n2221aub, ubc 2n2222a, l 2n2222aua 2n2222aub, ubc r ja 325 210 325 c/w 1. derate linearly 3.08 mw/c above t a > +37.5c 2. derate linearly 4.76 mw/c above t a > +63.5c to-18 (to-206aa) 2n2221a, 2n2222a 4 pin 2n2221aua, 2n2222aua 3 pin 2n2221aub, 2n2222aub 2n2221aubc, 2n2222aubc (ubc = ceramic lid version) downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0042 rev. 3 (100247) page 2 of 7 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics collector-emitter breakdown voltage i c = 10madc v (br)ceo 50 vdc collector-base cutoff current v cb = 75vdc v cb = 60vdc i cbo 10 10 adc adc emitter-base cutoff current v eb = 6.0vdc v eb = 4.0vdc i ebo 10 10 adc adc collector-emitter cutoff current v ce = 50vdc i ces 50 adc on characteristics (3) forward-current transfer ratio i c = 0.1madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 30 50 i c = 1.0madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 35 75 150 325 i c = 10madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 40 100 i c = 150madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 40 100 120 300 i c = 500madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc h fe 20 30 collector-emitter saturation voltage i c = 150madc, i b = 15madc i c = 500madc, i b = 50madc v ce(sat) 0.3 1.0 vdc base-emitter voltage i c = 150madc, i b = 15madc i c = 500madc, i b = 50madc v be(sat) 0.6 1.2 2.0 vdc downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0042 rev. 3 (100247) page 3 of 7 dynamic characteristics parameters / test conditions symbol min. max. unit small-signal short-circuit forward current transfer ratio i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc h fe 30 50 magnitude of smallCsignal short-circuit forward current transfer ratio i c = 20madc, v ce = 20vdc, f = 100mhz |h fe | 2.5 output capacitance v cb = 10vdc, i e = 0, 100khz f 1.0mhz c obo 8.0 pf input capacitance v eb = 0.5vdc, i c = 0, 100khz f 1.0mhz c ibo 25 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time see figure 8 of mil-prf-19500/255 t on 35 s turn-off time see figure 9 of mil-prf-19500/255 t off 300 s (3) pulse test: pulse width = 300 s, duty cycle 2.0%. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0042 rev. 3 (100247) page 4 of 7 package dimensions notes: dimensions 1. dimensions are in inches. symbol inches millimeters note 2. millimeters are given for general information only. min max min max 3. beyond r (radius) maximum, tl shall be held for a minimum length cd .178 .195 4.52 4.95 of .011 inch (0.28 mm). ch .170 .210 4.32 5.33 4. dimension tl measured from maximum hd. hd .209 .230 5.31 5.84 5. body contour optional within zone defined by hd, cd, and q. lc .100 tp 2.54 tp 6 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) ld .016 .021 0.41 0.53 7,8 below seating plane shall be within .007 inch (0.18 mm) radius of ll .500 .750 12.7 0 19.05 7,8,13 true position (tp) at maximum material condition (mmc) relative to lu .016 .019 0.41 0.48 7,8 tab at mmc. l 1 .050 1.27 7,8 7. dimension lu applies between l 1 and l 2 . dimension ld applies l 2 .250 6.35 7,8 between l 2 and ll minimum. diamet er is uncontrolled in l 1 and p .100 2.54 beyond ll minimum. q .030 0.76 5 8. all three leads. tl .028 .048 0.71 1.22 3,4 9. the collector shall be internally connected to the case. tw .036 .046 0.91 1.17 3 10. dimension r (radius) applies to both inside corners of tab. r .010 0.25 10 11. in accordance with asme y14.5m, diameters are equivalent to x 45 tp 45 tp 6 symbology. 1, 2, 9, 11, 12, 13 12. lead 1 = emitter, lead 2 = base, lead 3 = collector. 13. for l suffix devices, dimension ll = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. figure 1. physical dimensions (similar to to-18) . downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0042 rev. 3 (100247) page 5 of 7 notes: dimensions 1. dimensions are in inches. symbol inches millimeters note 2. millimeters are given for general information only. min max min max 3. dimension ch controls the overall package thickness. when a bl .215 .225 5.46 5.71 window lid is used, dimension ch must increase by a minimum of bl2 .225 5.71 .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). bw .145 .155 3.68 3. 93 4. the corner shape (square, notch, radius) may vary at the bw2 .155 3.93 manufacturer's option, from that shown on the drawing. ch .061 .075 1.55 1.90 3 5. dimensions lw2 minimum and l3 minimum and the appropriate l3 .003 .007 0.08 0.18 5 castellation length define an unobstructed three-dimensional space lh .029 .042 0.74 1.07 traversing all of the ceramic layers in which a castellation was ll1 .032 .048 0.81 1.22 designed. (castellations are required on the bottom two layers, ll2 .072 .088 1.83 2.23 optional on the top ceramic layer.) dimension lw2 maximum and ls .045 .055 1.14 1.39 l3 maximum define the maximum width and depth of the lw .022 .028 0.56 0.71 castellation at any point on its surface. measurement of these lw2 .006 .022 0.15 0.56 5 dimensions may be made prior to solder dipping. 6. the co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for pin no. 1 2 3 4 solder dipped leadless chip carri ers. transistor collector emitter base n/c 7. in accordance with asme y14. 5m, diameters are equivalent to x symbology. figure 2. physical dimensions, surface mount (ua version) . downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0042 rev. 3 (100247) page 6 of 7 dimensions dimensions symbol inches millimeters note symbol inches millimeters note min max min max min max min max bh .046 .056 1.17 1.42 ls 1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls 2 .071 .079 1.81 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r 1 .012 .305 ll1 .022 .038 0.56 0.96 r 2 .022 .559 ll2 .017 .035 0.43 0.89 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metalized areas. 4. pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 5. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 3. physical dimensions, surface mount (ub version) ub downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com t4-lds-0042 rev. 3 (100247) page 7 of 7 dimensions dimensions symbol inches millimeters note symbol inches millimeters note min max min max min max min max bh .046 .071 1.17 1.80 ls 1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls 2 .071 .079 1.81 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r 1 .012 .305 ll1 .022 .038 0.56 0.96 r 2 .022 .559 ll2 .017 .035 0.43 0.89 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metalized areas. 4. pad 1 = base, pad 2 = emitter, pad 3 = collect or, pad 4 = connected to the lid braze ring. 5. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 4. physical dimensions, surface mount (ubc version, ceramic lid) ubc downloaded from: http:///
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